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96SD1-512M400NN-AP
MEMORY MODULE, 512MB SO-DDR1 400 64X8 PROMOS
  1. DDR1-400 SO-DIMM
  2. 200-Pin
  3. 64MX8
  4. 512MB
  5. 2.5V Unbuffered
  6. Promos Chip

NT$624

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XPCM-1GMCX1DB-JA61
MEMORY MODULE, DDR1 SO DIMM 1GB 333Mhz -20~85C Micron
  1. 200-pin SODIMM
  2. Data transfer rate: 333 MT/s Capacity: 1GB
  3. JEDEC standard 2.6V +/- 0.2V power supply
  4. Original Micron IC chip
  5. Operating temperature range: -20 °C ~ 85 °C

NT$2,214

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SQR-SD1M-1G333MNJB
MEMORY MODULE, SO-D1 333 1G 64MX8 MICRON -20-85
  1. 200-pin SODIMM
  2. Data transfer rate: 333 MT/s Capacity: 512MB/1GB
  3. JEDEC standard 2.5V power supply
  4. Original Micron IC chip
  5. Operating temperature range: 0 °C ~ 85 °C/ -20 °C ~ 85 °C

NT$2,838

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SQR-SD1N-12M333MIJ
MEMORY MODULE, SO DDR 333 512MB (0-85) 32x16 Micron-J
  1. 200-pin SODIMM
  2. Data transfer rate: 333 MT/s Capacity: 512MB/1GB
  3. JEDEC standard 2.5V power supply
  4. Original Micron IC chip
  5. Operating temperature range: 0 °C ~ 85 °C/ -20 °C ~ 85 °C

NT$986

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96SD4-16G3200NN-MI
MEMORY MODULE, Micron 16GB DDR4 SODIMM 3200Mhz 1Gbx8 1.2V
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

NT$2,158

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96SD4-4G3200NN-MI
MEMORY MODULE, Micron 4GB DDR4 SODIMM 3200Mhz 512Mbx16 1.2V
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

NT$595

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96SD4-8G3200NN-MI
MEMORY MODULE, Micron 8GB DDR4 SODIMM 3200Mhz 1Gbx8 1.2V
  1. DDR4 3200Mhz Unbuffered DIMM
  2. SODIMM 260pin / UDIMM 288pin
  3. 1.2V Power Consumption
  4. Low-power auto self- refresh (LPASR)
  5. Data bus inversion (DBI) for data bus
  6. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

NT$1,079

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AQD-D4U4GN24-SG
MEMORY MODULE, 4G DDR4-2400 512X8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

NT$680

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AQD-SD4U16N24-SE
MEMORY MODULE, 16G SO-DDR4-2400 1GX8 1.2V SAM
  1. DDR4-2400 Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

NT$2,377

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